Features
• Low Noise and Small Pitch CTIA ROIC
• 320×256-30µm SWIR FPAs including InGaAs, CQD, T2SL, MCT, and GeSi
• 2, 4, or 8 analog outputs with analog reference
• Programmable Biasing, Timing, and Windowing
• Snapshot Operation: ITR Mode
• Low Noise and Small Pitch CTIA ROIC
• 320×256-30µm SWIR FPAs including InGaAs, CQD, T2SL, MCT, and GeSi
• 2, 4, or 8 analog outputs with analog reference
• Programmable Biasing, Timing, and Windowing
• Snapshot Operation: ITR Mode
| SPECIFICATIONS | VALUES | |||
|---|---|---|---|---|
| Detector Array Format | 320×256 | |||
| Pixel Size | 30µm×30µm | |||
| Piksel Polaritesi | Supports both p-on-n and n-on-p detector arrays | |||
| Input Circuit Type | Capacitive Trans Impedance Amplifier (CTIA) | |||
| Full Well Capacity (Double Gain) | HG: 60.000 e- | LG: 350.000 e- | ||
| Detector Biasing | 12-bit programmable in 0.7mV steps | |||
| Integration Time | Programmable from 100ns to 1s in 100ns steps | |||
| Number of Analog Outputs | Programmable 2, 4, or 8 with reference | |||
| Output Swing | < 2.0V with adjustable gain and offset | |||
| Readout Modes | Snapshot Operation: ITR Mode | |||
| Windowing | Programmable size and location | |||
| System Clock | Nominal 10 MHz (upto 12.5MHz) | |||
| Frame Rate | ≤ 1040 Hz at full frame, upto 4000 Hz with windowing | |||
| Power Dissipation | ≤ 150 mW, 3.3V and 1.8V Supplies | |||
| Readout Noise | HG: < 30e- rms | LG: < 110e- rms | ||
| Operating Temperature | Room Temperature (300K) and Cryogenic (77K) | |||
| Temperature Sensor | On-chip active sensor with 1mV/K sensitivity | |||
| Wafer Size / Die Size / DPW | Wafer: 200mm | Die: 12.20 mm×13.30 mm | Total: 133 Dice | 100 A+ Grade Die (Typical) |
| Product Delivery | Tested wafers or singulated parts with test data | |||